Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy

Hamilton, A, Frost, J, Smith, C et al. (8 more authors) (1992) Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy. Applied Physics Letters, 60 (22). pp. 2782-2784. ISSN 0003-6951

Abstract

Metadata

Authors/Creators:
  • Hamilton, A
  • Frost, J
  • Smith, C
  • Kelly, M
  • Linfield, E
  • Ford, C
  • Ritchie, D
  • Jones, G
  • Pepper, M
  • Hasko, D
  • Ahmed, H
Keywords: Ballistic transport; Carrier density; Electron gas; Electrostatics; Epitaxy
Dates:
  • Published: 1 June 1992
  • Accepted: 30 March 1992
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 12 Jul 2016 11:12
Last Modified: 12 Jul 2016 11:12
Published Version: http://dx.doi.org/10.1063/1.106849%20%EE%98%8E
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.106849
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