The effect of low-energy GA IONS on GAAS/AIGAAS heterostructures

Linfield, E, Ritchie, D, Jones, G et al. (2 more authors) (1990) The effect of low-energy GA IONS on GAAS/AIGAAS heterostructures. Semiconductor Science and Technology, 5 (5). pp. 385-390. ISSN 0268-1242

Abstract

Metadata

Authors/Creators:
  • Linfield, E
  • Ritchie, D
  • Jones, G
  • Frost, J
  • Peacock, D
Dates:
  • Published: May 1990
  • Accepted: 8 November 1989
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 12 Jul 2016 11:00
Last Modified: 04 Nov 2016 02:05
Published Version: http://dx.doi.org./10.1088/0268-1242/5/5/002
Status: Published
Publisher: IOP Publishing
Identification Number: https://doi.org/10.1088/0268-1242/5/5/002
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