1. Introduction High power Terahertz (THz) frequency quantum cascade lasers (QCLs) have potential applications in spectroscopy, imaging and remote sensing etc. [1-2] One possible way to increase output powers in semiconductor lasers is using longer and/or broader area laser cavities. Therefore, we demonstrate THz QCLs with >1‑W peak output power from a single facet at 10 K by using broad area laser ridges. The active region is based on GaAs–AlGaAs bound-to-continuum quantum cascade structure incorporating a single-quantum-well phonon extraction/injection stage, reported in Ref. 3. The whole QCL structure was grown by solid-source molecular beam epitaxy on a semi-insulating GaAs substrate. 2. Results Figures 1(a) and (b) show the performance of a high power THz QCL, which operated in pulsed mode with 2% duty cycle with emitted frequency at 3.4 THz. The device emits 1.01‑W peak output power at 10 K when driven with 2‑μs-long pulses at a repetition rate of 10 kHz, and operated to a maximum operating temperature of 120 K. (a) (b) Fig. 1 (a) L–I–V curves, and (b) spectra of a high power THz QCL with a bound-to-continuum THz QCL active region incorporating a single-quantum-well phonon extraction/injection stage obtained with a 2% pulse duty cycle. We acknowledge support from EPRSC (UK), the European Research Council grants ‘NOTES’ and ‘TOSCA’, the Royal Society and Wolfson Foundation. Reference [1] B.S. Williams et al., Electronics Letters 42, 89 (2006). [2] M. Brandstetter et al., Applied Physics Letters 103, 171113 (2013). [3] M. I. Amanti et al., New Journal of Physics 11, 125022 (2009).
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