An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown

Xie, J., Ng, J.S. and Tan, C.H. (2013) An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown. IEEE Photonics Journal, 5 (4). ISSN 1943-0655

Abstract

Metadata

Authors/Creators:
  • Xie, J.
  • Ng, J.S.
  • Tan, C.H.
Copyright, Publisher and Additional Information: © 2013 The Author(s). This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Keywords: Temperature dependence; avalanche photodiodes (APDs); AlAsSb
Dates:
  • Published: 11 July 2013
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 26 Feb 2015 15:57
Last Modified: 26 Feb 2015 15:57
Published Version: http://dx.doi.org/10.1109/JPHOT.2013.2272776
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/JPHOT.2013.2272776

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