Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures

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Ivanov, P, Valavanis, A, Ikonic, Z et al. (1 more author) Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures. In: UNSPECIFIED International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013, 3 - 5 September 2013, Glasgow, Scotland, United Kingdom. IEEE .

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Authors/Creators:
  • Ivanov, P
  • Valavanis, A
  • Ikonic, Z
  • Kelsall, RW
Copyright, Publisher and Additional Information: (c) 2013, IEEE. This is an author produced version of a paper published in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013. Uploaded in accordance with the publisher's self-archiving policy
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 23 Oct 2014 10:02
Last Modified: 03 Nov 2017 04:29
Published Version: http://www.sispad.org/sispad/browse-proceedings/si...
Status: Published
Publisher: IEEE

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