High-aspect-ratio through silicon vias (TSVs) for high-frequency application fabricated by magnetic assembly of gold-coated nickel wires

Bleiker, S, Fischer, A, Shah, A et al. (6 more authors) (2015) High-aspect-ratio through silicon vias (TSVs) for high-frequency application fabricated by magnetic assembly of gold-coated nickel wires. IEEE Transactions on Components, Packaging and Manufacturing Technology, 5 (1). 21 - 27. ISSN 2156-3950

Abstract

Metadata

Authors/Creators:
  • Bleiker, S
  • Fischer, A
  • Shah, A
  • Somjit, N
  • Haraldsson, T
  • Roxhed, N
  • Oberhammer, J
  • Stemme, G
  • Niklaus, F
Copyright, Publisher and Additional Information: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords: Packaging; Electronics; 3D Integration; RF signal transmission; wafer scale integration
Dates:
  • Published: 13 January 2015
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 23 Oct 2014 14:58
Last Modified: 24 Oct 2015 17:29
Published Version: http://dx.doi.org/10.1109/TCPMT.2014.2369236
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Identification Number: https://doi.org/10.1109/TCPMT.2014.2369236

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