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Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

Evans, C.A., Jovanović, V.D., Indjin, D., Ikonić, Z. and Harrison, P. (2006) Thermal effects in InGaAs/AlAsSb quantum-cascade lasers. Optoelectronics - IEE Proceedings, 153 (6). pp. 287-292. ISSN 1350-2433

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Abstract

A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.

Item Type: Article
Copyright, Publisher and Additional Information: © 2006 The Institute of Engineering and Technology. This is an author produced version of a paper published in 'Optoelectronics - IEE Proceedings'. Uploaded in accordance with the publisher's self archiving policy.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 13 Mar 2009 18:19
Last Modified: 08 Feb 2013 17:06
Published Version: http://dx.doi.org/10.1049/ip-opt:20060039
Status: Published
Publisher: The Institution of Engineering and Technology
Refereed: Yes
Identification Number: 10.1049/ip-opt:20060039
URI: http://eprints.whiterose.ac.uk/id/eprint/7975

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