Evans, C.A., Jovanović, V.D., Indjin, D., Ikonić, Z. and Harrison, P. (2006) Thermal effects in InGaAs/AlAsSb quantum-cascade lasers. Optoelectronics - IEE Proceedings, 153 (6). pp. 287-292. ISSN 1350-2433Full text available as:
Available under License : See the attached licence file.
A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.
|Copyright, Publisher and Additional Information:||© 2006 The Institute of Engineering and Technology. This is an author produced version of a paper published in 'Optoelectronics - IEE Proceedings'. Uploaded in accordance with the publisher's self archiving policy.|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Sherpa Assistant|
|Date Deposited:||13 Mar 2009 18:19|
|Last Modified:||08 Feb 2013 17:06|
|Publisher:||The Institution of Engineering and Technology|
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