Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
Palenskis, V, Matukas, J, Pralgauskaite, S et al. (6 more authors)
(2013)
Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition.
Journal of Applied Physics, 113 (8).
083707.
ISSN 0021-8979
Abstract
Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 Hz-20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mott transition exhibits two peaks - a frequency and temperature-dependent peak between 120 and 180 K and a broadband, frequency- and temperature- nearly independent peak around 270 K. Activation energies are estimated; origin of the broadband maximum is attributed to holes tunnelling into defect trap states located in the AlAs barrier/GaAs quantum well interface.
Metadata
Authors/Creators:
Palenskis, V
Matukas, J
Pralgauskaite, S
Seliuta, D
Kašalynas, I
Subačius, L
Valušis, G
Khanna, SP
Linfield, EH
Copyright, Publisher and Additional Information:
(c) 2013, American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy.
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