Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures

Warning

There is a more recent version of this eprint available. Click here to view it.

Ivanov, P, Valavanis, A, Ikonic, Z et al. (1 more author) (2013) Simulated effect of epitaxial growth variations on THz emission and gain of SiGe/Ge quantum cascade structures. In: UNSPECIFIED International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013, 3 - 5 September 2013, Glasgow, Scotland, United Kingdom. , pp. 328-331.

Metadata

Authors/Creators:
  • Ivanov, P
  • Valavanis, A
  • Ikonic, Z
  • Kelsall, RW
Dates:
  • 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 17 Jun 2013 13:18
Last Modified: 04 Nov 2016 02:55
Published Version: http://in4.iue.tuwien.ac.at/pdfs/sispad2013/P34.pd...
Status: Published

Available Versions of this Item

Download not available

A full text copy of this item is not currently available from White Rose Research Online

Share / Export