Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update M. El-Gomati F. Zaggout H. Jayacody S. Tear K. Wilson

El-Gomati, M., Zaggout, F., Jayacody, H., Tear, S. and Wilson, K. (2005) Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update M. El-Gomati F. Zaggout H. Jayacody S. Tear K. Wilson. Surface and Interface Analysis, 37 (11). pp. 901-911. ISSN 0142-2421

Abstract

Metadata

Authors/Creators:
  • El-Gomati, M.
  • Zaggout, F.
  • Jayacody, H.
  • Tear, S. (spt1@york.ac.uk)
  • Wilson, K.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 11 Feb 2009 15:09
Last Modified: 11 Feb 2009 15:09
Published Version: http://dx.doi.org/10.1002/sia.2108
Status: Published
Publisher: John Wiley & Sons
Identification Number: 10.1002/sia.2108

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