Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation

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Valavanis, A, Ikonic, Z and Kelsall, RW (2007) Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation. Physical review A: General physics, 75 (20). 205332. ISSN 0556-2791

Abstract

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Authors/Creators:
  • Valavanis, A
  • Ikonic, Z
  • Kelsall, RW
Copyright, Publisher and Additional Information: © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: 100 Inversion layer; cascade structures; strained si; silicon; heterostructures; electrolumininescence; superlattices
Dates:
  • Published: 22 May 2007
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 12 Jan 2015 11:11
Last Modified: 16 Sep 2016 14:26
Published Version: http://dx.doi.org/10.1103/PhysRevB.75.205332
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.75.205332

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