Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering

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Lever, L, Ikonic, Z, Valavanis, A et al. (7 more authors) (2012) Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering. Journal of Applied Physics, 112 (12). 123105 - 123105-7 . ISSN 0021-8979

Abstract

Metadata

Authors/Creators:
  • Lever, L
  • Ikonic, Z
  • Valavanis, A
  • Kelsall, RW
  • Myronov, M
  • Leadley, DR
  • Hu, Y
  • Owens, N
  • Gardes, FY
  • Reed, GT
Copyright, Publisher and Additional Information: (c) 2012, American Institute of Physics. This is an author produced version of a paper published in the Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: carrier lifetime, conduction bands, elemental semiconductors, excitons, germanium, infrared spectra, quantum confined Stark effect, semiconductor quantum wells, spectral line shift
Dates:
  • Published: 18 December 2012
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 06 Mar 2013 12:28
Last Modified: 26 Oct 2017 18:55
Published Version: http://dx.doi.org/10.1063/1.4768935
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.4768935

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