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Lever, L, Ikonic, Z, Valavanis, A et al. (7 more authors) (2012) Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering. Journal of Applied Physics, 112 (12). 123105 - 123105-7 . ISSN 0021-8979
Abstract
We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si0.22Ge0.78 virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the Γ-valley carrier lifetimes by evaluating the Γ→L and Γ→Δ scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically varied dimensions. We find that Γ→Δ scattering is significant in compressively strained Ge quantum wells and that the Γ-valley electron lifetime is less than 50 fs in the highly strained structures reported here, where Γ→Δ scattering accounted for approximately half of the total scattering rate.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2012, American Institute of Physics. This is an author produced version of a paper published in the Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | carrier lifetime, conduction bands, elemental semiconductors, excitons, germanium, infrared spectra, quantum confined Stark effect, semiconductor quantum wells, spectral line shift |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 06 Mar 2013 12:28 |
Last Modified: | 26 Oct 2017 18:55 |
Published Version: | http://dx.doi.org/10.1063/1.4768935 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.4768935 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:75216 |
Available Versions of this Item
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Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering. (deposited 28 Feb 2013 14:45)
- Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering. (deposited 06 Mar 2013 12:28) [Currently Displayed]