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Less strain energy despite fewer dislocations: The Impact of Ordering

Schmidt, T., Kröger, R., Flege, J.I., Clausen, T., Falta, J., Janzen, A., Zahl, P., Kury, P., Kammler, M. and Horn-von Hoegen, M. (2006) Less strain energy despite fewer dislocations: The Impact of Ordering. Physical Review Letters, 96 (6). 066101-4 PAGES. ISSN 0031-9007

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Abstract

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.

Item Type: Article
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 25 Feb 2009 12:19
Last Modified: 25 Feb 2009 12:19
Published Version: http://dx.doi.org/10.1103/PhysRevLett.96.066101
Status: Published
Publisher: American Physical Society
Identification Number: 10.1103/PhysRevLett.96.066101
URI: http://eprints.whiterose.ac.uk/id/eprint/7222

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