Schmidt, T., Kröger, R., Flege, J.I., Clausen, T., Falta, J., Janzen, A., Zahl, P., Kury, P., Kammler, M. and Horn-von Hoegen, M. (2006) Less strain energy despite fewer dislocations: The Impact of Ordering. Physical Review Letters, 96 (6). 066101-4 PAGES. ISSN 0031-9007Full text not available from this repository.
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.
|Academic Units:||The University of York > Physics (York)|
|Depositing User:||York RAE Import|
|Date Deposited:||25 Feb 2009 12:19|
|Last Modified:||25 Feb 2009 12:19|
|Publisher:||American Physical Society|
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