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Electro-optical properties of semiconductor quauntums dots: Application to quantum information processing

Biolatti, E., D’Amico, I., Zanardi, P. and Rossi, F. (2002) Electro-optical properties of semiconductor quauntums dots: Application to quantum information processing. Physical Review B, 65 (7). 075306-23 PAGES. ISSN 1550-235X

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Abstract

A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic—i.e., fully tridimensional—description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. More specifically, we investigate the combined effect of static electric fields and ultrafast sequences of multicolor laser pulses in the few-carrier, i.e., low-excitation regime. In particular, we show how the presence of a properly tailored static field may give rise to significant electron-hole charge separation; these field-induced dipoles, in turn, may introduce relevant exciton-exciton couplings, which are found to induce significant—both intradot and interdot—biexcitonic splittings. We finally show that such few-exciton systems constitute an ideal semiconductor-based hardware for an all optical implementation of quantum information processing.

Item Type: Article
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 26 Feb 2009 10:00
Last Modified: 26 Feb 2009 10:00
Published Version: http://dx.doi.org/10.1103/PhysRevB.65.075306
Status: Published
Publisher: The American Physical Society.
Identification Number: 10.1103/PhysRevB.65.075306
URI: http://eprints.whiterose.ac.uk/id/eprint/7206

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