Stone, M.R., Naftaly, M., Miles, R.E., Fletcher, J.R. and Steenson, D.P. (2004) Electrical and radiation characteristics of semilarge photoconductive terahertz emitters. IEEE Transactions on Microwave Theory and Techniques, 52 (10). pp. 2420-2429. ISSN 0018-9480Full text available as:
Available under License : See the attached licence file.
We present experimental characterization of semilarge photoconductive emitters, including their electrical/photoconductive parameters and terahertz spectra. A range of emitters were studied and fabricated on both LT-GaAs and SI-GaAs, having a variety of electrode geometries. The spatial cone of terahertz radiation was defined. The dependencies of the photocurrent and the terahertz power on the bias voltage and the laser power were determined. A Fourier-transform interferometer is used to determine the terahertz spectra and to clarify the effects of the substrate and electrode geometry.
|Copyright, Publisher and Additional Information:||Copyright © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Keywords:||interferometer, low-temperature (LT) grown GaAs, photoconductive emitter, terahertz|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Sherpa Assistant|
|Date Deposited:||10 Oct 2005|
|Last Modified:||08 Feb 2013 17:02|
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