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Making electrical contacts to nanowires with a thick oxide coating

Cronin, S.B., Lin, Y., Rabin, O., Black, M., Ying, J., Dresselhaus, M.S., Gai, P.L., Minet, J. and Issi, J. (2002) Making electrical contacts to nanowires with a thick oxide coating. Nanotechnology, 13 (5). pp. 653-658. ISSN 0957-4484

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Abstract

Techniques are presented for making ohmic contacts to nanowires with a thick oxide coating. Although experiments were carried out on Bi nanowires, the techniques described in this paper are generally applicable to other nanowire systems. Metal electrodes are patterned to individual Bi nanowires using electron beam lithography. Imaging the chemical reaction on the atomic scale with in situ high-resolution transmission electron microscopy shows that annealing in H2 or NH3 can reduce the nanowires’ oxide coating completely. The high temperatures required for this annealing, however, are not compatible with the lithographic techniques. Low-resistance ohmic contacts to individual bismuth nanowires are achieved using a focused ion beam (FIB) to first sputter away the oxide layer and then deposit Pt contacts. By combining electron beam lithography and FIB techniques, ohmic contacts stable from 2 to 400 K are successfully made to the nanowires. A method for preventing the burnout of nanowires from electrostatic discharge is also developed.

Item Type: Article
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 27 Mar 2009 15:49
Last Modified: 27 Mar 2009 15:49
Published Version: http://dx.doi.org/10.1088/0957-4484/13/5/322
Status: Published
Publisher: Institute of Physics; 1999
Identification Number: 10.1088/0957-4484/13/5/322
URI: http://eprints.whiterose.ac.uk/id/eprint/7061

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