On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Kröger, R., Einfeldt, S., Chierchia, R. et al. (4 more authors) (2005) On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates. Journal of Applied Physics, 97 (8). Art. No. 083501. ISSN 0021-8979

Abstract

Metadata

Authors/Creators:
  • Kröger, R. (rk523@york.ac.uk)
  • Einfeldt, S.
  • Chierchia, R.
  • Hommel, D.
  • Reitmeier, Z.J.
  • Davis, R.F.
  • Liu, Q.K.K.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 04 Aug 2009 17:34
Last Modified: 04 Aug 2009 17:34
Published Version: http://dx.doi.org/10.1063/1.1861152
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.1861152

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