Nikolaev, V V and Avrutin, E A (2003) Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters. IEEE Journal of Quantum Electronics. pp. 1653-1660. ISSN 0018-9197Full text available as:
We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the,escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the Position,of quantum-well energy levels and the value of the escape time are found. the main escape mechanism At room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization.
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|Keywords:||optoelectronic devices, quantum wells (QWs), saturable absorbers, LOCKED SEMICONDUCTOR-LASERS, DYNAMICS, ALXGA1-XAS, EQUATION, STATES, GAAS|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Eugene A Avrutin|
|Date Deposited:||19 Sep 2005|
|Last Modified:||17 Oct 2013 14:28|