Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters

Nikolaev, V V and Avrutin, E A orcid.org/0000-0001-5488-3222 (2003) Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters. IEEE Journal of Quantum Electronics. pp. 1653-1660. ISSN 0018-9197

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Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: optoelectronic devices,quantum wells (QWs),saturable absorbers,LOCKED SEMICONDUCTOR-LASERS,DYNAMICS,ALXGA1-XAS,EQUATION,STATES,GAAS
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Eugene A Avrutin
Date Deposited: 19 Sep 2005
Last Modified: 01 Jun 2016 06:36
Published Version: http://dx.doi.org/10.1109/JQE.2003.819527
Status: Published
Refereed: Yes

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