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Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters

Nikolaev, V V and Avrutin, E A (2003) Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters. IEEE Journal of Quantum Electronics. pp. 1653-1660. ISSN 0018-9197

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Abstract

We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the,escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the Position,of quantum-well energy levels and the value of the escape time are found. the main escape mechanism At room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: optoelectronic devices, quantum wells (QWs), saturable absorbers, LOCKED SEMICONDUCTOR-LASERS, DYNAMICS, ALXGA1-XAS, EQUATION, STATES, GAAS
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Eugene A Avrutin
Date Deposited: 19 Sep 2005
Last Modified: 16 Oct 2014 18:03
Published Version: http://dx.doi.org/10.1109/JQE.2003.819527
Status: Published
Refereed: Yes
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/632

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