Kroger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A. and Monemar, B. (2007) Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90 (8). 081918. ISSN 0003-6951
Full text not available from this repository.Abstract
The interface between a-plane GaN, grown by metal organic vapor phase epitaxy and hydride vapor phase epitaxy, and r-plane sapphire was investigated by transmission electron microscopy in [1−100] and [0001] zone axis orientations. The interfacial structure was well defined allowing a direct observation of the misfit dislocations in both orientations. An analysis of these dislocations revealed for the respective Burgers vectors a 1/32−1−10 component in the {0002} planes and a 1/20001 component in the {1−100} planes. In addition, the relative atomic column configurations in the GaN and sapphire were determined based on Bloch-wave simulations in comparison with the experimental images.
| Item Type: | Article |
|---|---|
| Academic Units: | The University of York > Physics (York) |
| Depositing User: | York RAE Import |
| Date Deposited: | 13 Aug 2009 11:39 |
| Last Modified: | 13 Aug 2009 11:39 |
| Published Version: | http://dx.doi.org/10.1063/1.2696309 |
| Status: | Published |
| Publisher: | American Institute of Physics |
| Identification Number: | 10.1063/1.2696309 |
| URI: | http://eprints.whiterose.ac.uk/id/eprint/5649 |
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