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Interfacial structure of a-plane GaN grown on r-plane sapphire

Kroger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A. and Monemar, B. (2007) Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90 (8). 081918. ISSN 0003-6951

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Abstract

The interface between a-plane GaN, grown by metal organic vapor phase epitaxy and hydride vapor phase epitaxy, and r-plane sapphire was investigated by transmission electron microscopy in [1−100] and [0001] zone axis orientations. The interfacial structure was well defined allowing a direct observation of the misfit dislocations in both orientations. An analysis of these dislocations revealed for the respective Burgers vectors a 1/32−1−10 component in the {0002} planes and a 1/20001 component in the {1−100} planes. In addition, the relative atomic column configurations in the GaN and sapphire were determined based on Bloch-wave simulations in comparison with the experimental images.

Item Type: Article
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 13 Aug 2009 11:39
Last Modified: 13 Aug 2009 11:39
Published Version: http://dx.doi.org/10.1063/1.2696309
Status: Published
Publisher: American Institute of Physics
Identification Number: 10.1063/1.2696309
URI: http://eprints.whiterose.ac.uk/id/eprint/5649

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