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All-optical single-electron read-out devices based on GaN quantum dots

D'Amico, I. and Fossi, F. (2002) All-optical single-electron read-out devices based on GaN quantum dots. Applied Physics Letters, 81 (27). pp. 5213-5215. ISSN 0003-6951

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Abstract

We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole–dipole and dipole–monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to "exact" results. We apply our study to the design of an all-optical read-out device that exploits long-range dipole–monopole interactions and may be also used to monitor the charge status of a quantum dot system.

Item Type: Article
Academic Units: The University of York > Physics (York)
Depositing User: York RAE Import
Date Deposited: 13 Aug 2009 16:07
Last Modified: 13 Aug 2009 16:07
Published Version: http://dx.doi.org/10.1063/1.1532546
Status: Published
Publisher: American Institute of Physics
Identification Number: 10.1063/1.1532546
URI: http://eprints.whiterose.ac.uk/id/eprint/5647

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