Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Moontragoon, P., Ikonic, Z. and Harrison, P. (2007) Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials. Semiconductor Science and Technology, 22 (7). pp. 742-748. ISSN 1361-6641

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Authors/Creators:
  • Moontragoon, P.
  • Ikonic, Z.
  • Harrison, P.
Copyright, Publisher and Additional Information: © 2007 IOP Publishing Ltd. This is an author produced version of a paper published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy.
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 05 Dec 2008 13:39
Last Modified: 16 Sep 2016 13:41
Published Version: http://dx.doi.org/10.1088/0268-1242/22/7/012
Status: Published
Publisher: IOP
Refereed: Yes
Identification Number: 10.1088/0268-1242/22/7/012

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