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Magnetism and magnetotransport in sputtered Co-doped FeSi films

Morley, SA, Porter, NA and Marrows, CH (2011) Magnetism and magnetotransport in sputtered Co-doped FeSi films. Physica Status Solidi. Rapid Research Letters, 5 (12). 429 - 431 . ISSN 1862-6254

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Abstract

FeSi is a non-magnetic narrow-gap semiconductor that can be doped n-type by Co, which also gives rise to magnetic order. Here we report on the growth of sputtered thin films of Fe0.8Co0.2Si, which are predominantly ε -phase (B20 lattice structure), and possess that phase's characteristic magnetotransport properties. The ordinary Hall coefficient shows that each Co atom donates roughly one electron, whilst the magnetometry suggests that each gives rise to close to one Bohr magneton of moment. These results indicate that a highly spin-polarised electron gas persists despite the inevitable disorder in these thin films, suitable for spintronic devices.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2011 John Wiley & Sons. This is an author prepared version of a paper subsequently published in Physica Status Solidi, Rapid Research Letters. The definitive version is available at www.blackwell-synergy.com.
Keywords: silicides, FeSi, magnetoresistance, magnetotransport, Hall effect, half-metals
Academic Units: The University of Leeds > Faculty of Maths and Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 23 Feb 2012 14:08
Last Modified: 08 Feb 2013 17:37
Published Version: http://dx.doi/10.1002/pssr.201105386
Status: Published
Publisher: John Wiley & Sons
Refereed: Yes
Identification Number: 10.1002/pssr.201105386
URI: http://eprints.whiterose.ac.uk/id/eprint/43727

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