Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness

Califano, M., Vinh, N.Q., Phillips, P.J. et al. (10 more authors) (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness. Physical Review B, 75 (4). Art. No. 045338. ISSN 1550-235x

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Authors/Creators:
  • Califano, M.
  • Vinh, N.Q.
  • Phillips, P.J.
  • Ikonić, Z.
  • Kelsall, R.W.
  • Harrison, P.
  • Pidgeon, C.R.
  • Murdin, B.N.
  • Paul, D.J.
  • Townsend, P.
  • Zhang, J.
  • Ross, I.M.
  • Cullis, A.G.
Copyright, Publisher and Additional Information: © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self archiving policy.
Institution: The University of Sheffield, The University of Leeds
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 15 Aug 2008 11:47
Last Modified: 27 Oct 2016 16:11
Published Version: http://dx.doi.org/10.1103/PhysRevB.75.045338
Status: Published
Publisher: The American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.75.045338

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Filename: califano3.pdf

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