Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness

Califano, M., Vinh, N.Q., Phillips, P.J., Ikonić, Z., Kelsall, R.W., Harrison, P., Pidgeon, C.R., Murdin, B.N., Paul, D.J., Townsend, P., Zhang, J., Ross, I.M. and Cullis, A.G. (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness. Physical Review B, 75 (4). Art. No. 045338. ISSN 1550-235x

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Authors/Creators:
  • Califano, M.
  • Vinh, N.Q.
  • Phillips, P.J.
  • Ikonić, Z.
  • Kelsall, R.W.
  • Harrison, P.
  • Pidgeon, C.R.
  • Murdin, B.N.
  • Paul, D.J.
  • Townsend, P.
  • Zhang, J.
  • Ross, I.M.
  • Cullis, A.G.
Copyright, Publisher and Additional Information: © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self archiving policy.
Institution: The University of Sheffield, The University of Leeds
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 15 Aug 2008 11:47
Last Modified: 16 Sep 2016 17:07
Published Version: http://dx.doi.org/10.1103/PhysRevB.75.045338
Status: Published
Publisher: The American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.75.045338

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