Valavanis, A, Dinh, TV, Lever, LJM, Ikonic, Z and Kelsall, RW (2011) Material configurations for n-type silicon-based terahertz quantum cascade lasers. Physical Review B, 83 (19). ISSN 1098-0121
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Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent terahertz (THz) radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design candidates; however, the optimal material configuration remains unclear. In this work, an optimization algorithm is used to design equivalent THz QCLs in three recently proposed configurations [(001) Ge/GeSi, (001) Si/SiGe, and (111) Si/SiGe], with emission frequencies of 3 and 4 THz. A systematic comparison of the electronic and optical properties is presented. A semiclassical electron transport simulation is used to model the charge carrier dynamics and calculate the peak gain, the corresponding current density, and the maximum operating temperature. It is shown that (001) Ge/GeSi structures yield the best simulated performance at both emission frequencies.
|Keywords:||Monte-Carlo-Simulation, Electron-transport, Intersubband electroluminescence, Germanium, Semiconductors, Scattering, Alloys, Heterostructures, Gaas/algaas, Dynamics|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Symplectic Publications|
|Date Deposited:||01 Aug 2011 14:55|
|Last Modified:||08 Feb 2013 17:33|
|Publisher:||American Physical Society|
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Material configurations for n-type silicon-based terahertz quantum cascade lasers. (deposited 09 May 2011 13:27)
- Material configurations for n-type silicon-based terahertz quantum cascade lasers. (deposited 01 Aug 2011 14:55) [Currently Displayed]