Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics

Lever, L, Ikonic, Z, Valavanis, A et al. (2 more authors) (2010) Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics. Journal of Lightwave Technology, 28 (22). 3272 - 3281 (9). ISSN 0733-8724

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Authors/Creators:
  • Lever, L
  • Ikonic, Z
  • Valavanis, A
  • Cooper, J
  • Kelsall, R
Copyright, Publisher and Additional Information: © Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Modulation, quantum well devices, quantum-confined Stark effect
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 25 Nov 2010 12:02
Last Modified: 25 Oct 2016 13:53
Published Version: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/JLT.2010.2081345

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Filename: IEEELever2010.pdf

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