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Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics

Lever, L, Ikonic, Z, Valavanis, A, Cooper, J and Kelsall, R (2010) Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics. Journal of Lightwave Technology, 28 (22). 3272 - 3281 (9). ISSN 0733-8724

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We describe a combined 6×6 k.p and one-band effective mass modelling tool to calculate absorption spectra in Ge–SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge–SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge–SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Modulation, quantum well devices, quantum-confined Stark effect
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 25 Nov 2010 12:02
Last Modified: 04 Jun 2014 10:59
Published Version: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Status: Published
Publisher: IEEE
Identification Number: 10.1109/JLT.2010.2081345
URI: http://eprints.whiterose.ac.uk/id/eprint/42668

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