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Quantum dot superluminescent diodes for optical coherence tomography: device engineering

Greenwood, P.D.L., Childs, D.T.D., Kennedy, K., Groom, K.M., Hugues, M., Hopkinson, M., Hogg, R.A., Krstajic, N., Smith, L.E., Matcher, S.J., Bonesi, M., MacNeil, S. and Smallwood, R. (2010) Quantum dot superluminescent diodes for optical coherence tomography: device engineering. IEEE Journal of Selected Topics in Quantum Electronics, 16 (4). pp. 1015-1022. ISSN 1077-260X

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Abstract

We present a 18 m W fiber-coupled single-mode super-luminescent diode with 85 nm bandwidth for application in optical coherence tomography (OCT). First, we describe the effect of quantum dot (QD) growth temperature on optical spectrum and gain, highlighting the need for the optimization of epitaxy for broadband applications. Then, by incorporating this improved material into a multicontact device, we show how bandwidth and power can be controlled. We then go on to show how the spectral shape influences the autocorrelation function, which exhibits a coherence length of < 11 mu m, and relative noise is found to be 10 dB lower than that of a thermal source. Finally, we apply the optimum device to OCT of in vivo skin and show the improvement that can be made with higher power, wider bandwidth, and lower noise, respectively.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Optical coherence tomography (OCT); quantum dot (QD); skin imaging; superluminescent diodes (SLEDs)
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Computer Science (Sheffield)
The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 22 Nov 2010 10:04
Last Modified: 08 Feb 2013 17:29
Published Version: http://dx.doi.org/10.1109/JSTQE.2009.2038720
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JSTQE.2009.2038720
URI: http://eprints.whiterose.ac.uk/id/eprint/42656

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