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Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime

Ryvkin, B. S., Panajotov, K. and Avrutin, E. A. (2008) Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime. Journal of Applied Physics. 103102. ISSN 0021-8979

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Abstract

A semiconductor saturable absorber mirror utilizing the electroabsorption effect on a self-biased stack of extremely shallow quantum wells is proposed and analyzed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favorably with existing all-optical constructions. (C) 2008 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: © 2008 American Institute of Physics. This is an author produced version of a paper published in Journal Of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: SHALLOW QUANTUM-WELLS, LASERS, BISTABILITY, ABSORPTION, ABSORBER, DEVICES
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 28 Jul 2008 15:03
Last Modified: 23 Mar 2014 02:05
Published Version: http://dx.doi.org/10.1063/1.2921830
Status: Published
Refereed: Yes
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/4092

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