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Saturation of intersubband transitions in p-doped GaAs/AlGaAs quantum wells

Steed, R., Matthews, M., Plumridge, J., Frogley, M., Phillips, C., Ikonic, Z., Harrison, P., Malis, O., Pfeiffer, L.N. and West, K.W. (2008) Saturation of intersubband transitions in p-doped GaAs/AlGaAs quantum wells. Applied Physics Letters, 92 (18).

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Abstract

Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs/AlGaAs quantum wells. The transitions had energies of 183 and 160 meV and the measured population relaxation times were 2±1.5 and 0.3±0.1 ps, respectively. Modeling of the quantum wells with a 6×6 k·p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases.

Item Type: Article
Copyright, Publisher and Additional Information: © 2008 American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self archiving policy.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 25 Jul 2008 14:21
Last Modified: 08 Feb 2013 17:05
Published Version: http://dx.doi.org/10.1063/1.2920706
Status: Published
Publisher: American Institute of Physics
Identification Number: 10.1063/1.2920706
URI: http://eprints.whiterose.ac.uk/id/eprint/4087

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