Steed, R., Matthews, M., Plumridge, J., Frogley, M., Phillips, C., Ikonic, Z., Harrison, P., Malis, O., Pfeiffer, L.N. and West, K.W. (2008) Saturation of intersubband transitions in p-doped GaAs/AlGaAs quantum wells. Applied Physics Letters, 92 (18).Full text available as:
Available under licence : See the attached licence file.
Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs/AlGaAs quantum wells. The transitions had energies of 183 and 160 meV and the measured population relaxation times were 2±1.5 and 0.3±0.1 ps, respectively. Modeling of the quantum wells with a 6×6 k·p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases.
|Copyright, Publisher and Additional Information:||© 2008 American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self archiving policy.|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Sherpa Assistant|
|Date Deposited:||25 Jul 2008 14:21|
|Last Modified:||08 Feb 2013 17:05|
|Publisher:||American Institute of Physics|