it GW self-energy calculations of carrier-induced band-gap narrowing in n-type silicon

Oschlies, A., Godby, R.W. and Needs, R.J. (1995) it GW self-energy calculations of carrier-induced band-gap narrowing in n-type silicon. Physical Review B, 51 (3). pp. 1527-1535. ISSN 1098-0121

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Authors/Creators:
  • Oschlies, A.
  • Godby, R.W. (rwg3@york.ac.uk)
  • Needs, R.J.
Copyright, Publisher and Additional Information: © 1995 American Physical Society.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: Physics Import
Date Deposited: 25 Sep 2008 10:12
Last Modified: 25 Sep 2008 10:12
Published Version: http://link.aps.org/abstract/PRB/v51/p1527
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.51.1527
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