First-principles study of the effects of interface structure on the Schottky barrier height of the GaAs(110)/Al interface

Needs, R.J., Charlesworth, J.P.A. and Godby, R.W. (1994) First-principles study of the effects of interface structure on the Schottky barrier height of the GaAs(110)/Al interface. Europhysics Letters, 25. pp. 31-36. ISSN 0295-5075

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Authors/Creators:
  • Needs, R.J.
  • Charlesworth, J.P.A.
  • Godby, R.W. (rwg3@york.ac.uk)
Copyright, Publisher and Additional Information: © 1994 EDP Sciences, IOP Publishing and Società Italiana di Fisic.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: Physics Import
Date Deposited: 09 Oct 2008 13:57
Last Modified: 09 Oct 2008 15:10
Published Version: http://dx.doi.org/10.1209/0295-5075/25/1/006
Status: Published
Publisher: EDP Sciences, IOP Publishing and Società Italiana di Fisic
Identification Number: 10.1209/0295-5075/25/1/006
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