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First-principles self-energy calculations of carrier-induced band gap narrowing in silicon

Oschlies, A., Godby, R.W. and Needs, R.J. (1992) First-principles self-energy calculations of carrier-induced band gap narrowing in silicon. Physical Review B, 45 (23). pp. 13741-13744. ISSN 1098-0121

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Abstract

We calculate the band-gap narrowing in silicon caused by the introduction of additional electrons, using a first-principles self-energy approach within the GW approximation. We include full local-field effects and the nonlocal and energy-dependent dielectric function of the intrinsic material. We also analyze our calculations to test the approximations normally used in simple models of this effect: local-field effects are found to be unimportant, but the inclusion of the energy dependence of the dielectric response of the intrinsic material, which is normally neglected in model calculations, is found to be crucial at high carrier concentrations.

Item Type: Article
Copyright, Publisher and Additional Information: © 1992 American Physical Society.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: Physics Import
Date Deposited: 25 Sep 2008 10:06
Last Modified: 25 Sep 2008 10:06
Published Version: http://link.aps.org/abstract/PRB/v45/p13741
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.45.13741
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/3975

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