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Tailoring materials for quantum wells: band offsets at (001)-oriented GaAs/(AlAs)<sub>n</sub>(GaAs)<sub>m</sub> interfaces

Karlsson, K., Needs, R.J., Qteish, A. and Godby, R.W. (1990) Tailoring materials for quantum wells: band offsets at (001)-oriented GaAs/(AlAs)<sub>n</sub>(GaAs)<sub>m</sub> interfaces. Journal of Physics: Condensed Matter (Letters), 2. pp. 5265-5269. ISSN 0953-8984

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Abstract

The electronic structure at the interface between bulk GaAs(001) and short-period superlattices of (AlAs)n(GaAs)m has been calculated using ab initio pseudopotential techniques. The results show that the valence band offsets at such interfaces are very similar to those obtained experimentally for random alloy systems, but superior transport properties are anticipated for the ordered systems.

Item Type: Article
Copyright, Publisher and Additional Information: © 1990 Institute of Physics.
Institution: The University of York
Academic Units: The University of York > Physics (York)
Depositing User: Physics Import
Date Deposited: 09 Oct 2008 12:54
Last Modified: 09 Oct 2008 15:07
Published Version: http://www.iop.org/EJ/abstract/0953-8984/2/23/018/
Status: Published
Publisher: Institute of Physics
Identification Number: 10.1088/0953-8984/2/23/018
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/3970

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