A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators

Cross, R.B.M., De Souza, M.M., Deane, S.C. et al. (1 more author) (2008) A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on electron devices, 55 (5). pp. 1109-1115. ISSN 0018-9383

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Authors/Creators:
  • Cross, R.B.M.
  • De Souza, M.M.
  • Deane, S.C.
  • Young, N.D.
Copyright, Publisher and Additional Information: © Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 29 May 2008 09:19
Last Modified: 08 Feb 2013 16:56
Published Version: http://dx.doi.org/10.1109/TED.2008.918662
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/TED.2008.918662

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