White Rose University Consortium logo
University of Leeds logo University of Sheffield logo York University logo

Vertical spinal electronic device with large room temperature magnetoresistance

Ahmad, E., Valavanis, A., Claydon, J.S., Lu, Y.X. and Xu, Y.B. (2005) Vertical spinal electronic device with large room temperature magnetoresistance. IEEE Transactions on Magnetics, 41 (10). pp. 2592-2594. ISSN 0018-9464

Full text available as:
[img]
Preview
Text
01519058.pdf
Available under licence : See the attached licence file.

Download (130Kb)

Abstract

We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semiconductor (SC)/ferromagnetic(FM) type structure, i.e., Cr(20ML)/Co(15ML)/GaAs(50 nm, n-type)/Al/sub 0.3/Ga/sub 0.7/As(200 nm, n-type)/FeNi(30 nm). The current-voltage (I-V) characteristics reveal Schottky/tunneling type behavior in the direction of FeNi/Semiconductor/Co and observed to be dependent on external magnetic field. The magnetoresistance (MR) behavior shows a strong dependence on the measured current and field. At low fields no significant change in MR has been observed with increasing current. However, at high fields the MR initially increases with increasing current and becomes stable beyond a critical current of 10 /spl mu/A. A maximum of 12% change in the MR has been observed at room temperature, which is far larger than that of the conventional AMR effect. This property of the device could be utilized as field sensors or magnetic logic devices.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: III-V semiconductors, ferromagnetic materials, magnetic fields, magnetic semiconductors, magnetic tunnelling, magnetoelectronics, magnetoresistance AlGaAs, CPP geometry, I-V characteristics, III-V semiconductor, Schottky/tunneling behavior, current-voltage characteristics, external magnetic field, ferromagnetic type structure, field sensor, magnetic logic device, room temperature magnetoresistance, transport measurements, vertical hybrid ferromagnetic, vertical spinal electronic device
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 15 Feb 2008 16:20
Last Modified: 13 Jun 2014 15:55
Published Version: http://dx.doi.org/10.1109/TMAG.2005.854797
Status: Published
Publisher: IEEE
Identification Number: 10.1109/TMAG.2005.854797
URI: http://eprints.whiterose.ac.uk/id/eprint/3635

Actions (repository staff only: login required)