Ahmad, E., Valavanis, A., Claydon, J.S., Lu, Y.X. and Xu, Y.B. (2005) Vertical spinal electronic device with large room temperature magnetoresistance. IEEE Transactions on Magnetics, 41 (10). pp. 2592-2594. ISSN 0018-9464
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We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semiconductor (SC)/ferromagnetic(FM) type structure, i.e., Cr(20ML)/Co(15ML)/GaAs(50 nm, n-type)/Al/sub 0.3/Ga/sub 0.7/As(200 nm, n-type)/FeNi(30 nm). The current-voltage (I-V) characteristics reveal Schottky/tunneling type behavior in the direction of FeNi/Semiconductor/Co and observed to be dependent on external magnetic field. The magnetoresistance (MR) behavior shows a strong dependence on the measured current and field. At low fields no significant change in MR has been observed with increasing current. However, at high fields the MR initially increases with increasing current and becomes stable beyond a critical current of 10 /spl mu/A. A maximum of 12% change in the MR has been observed at room temperature, which is far larger than that of the conventional AMR effect. This property of the device could be utilized as field sensors or magnetic logic devices.
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|Keywords:||III-V semiconductors, ferromagnetic materials, magnetic fields, magnetic semiconductors, magnetic tunnelling, magnetoelectronics, magnetoresistance AlGaAs, CPP geometry, I-V characteristics, III-V semiconductor, Schottky/tunneling behavior, current-voltage characteristics, external magnetic field, ferromagnetic type structure, field sensor, magnetic logic device, room temperature magnetoresistance, transport measurements, vertical hybrid ferromagnetic, vertical spinal electronic device|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds)|
|Depositing User:||Dr Alexander Valavanis|
|Date Deposited:||15 Feb 2008 16:20|
|Last Modified:||13 Jun 2014 15:55|