Vertical spinal electronic device with large room temperature magnetoresistance

Ahmad, E., Valavanis, A., Claydon, J.S. et al. (2 more authors) (2005) Vertical spinal electronic device with large room temperature magnetoresistance. IEEE Transactions on Magnetics, 41 (10). pp. 2592-2594. ISSN 0018-9464

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Authors/Creators:
  • Ahmad, E.
  • Valavanis, A. (a.valavanis05@leeds.ac.uk)
  • Claydon, J.S.
  • Lu, Y.X.
  • Xu, Y.B.
Copyright, Publisher and Additional Information: © Copyright 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: III-V semiconductors, ferromagnetic materials, magnetic fields, magnetic semiconductors, magnetic tunnelling, magnetoelectronics, magnetoresistance AlGaAs, CPP geometry, I-V characteristics, III-V semiconductor, Schottky/tunneling behavior, current-voltage characteristics, external magnetic field, ferromagnetic type structure, field sensor, magnetic logic device, room temperature magnetoresistance, transport measurements, vertical hybrid ferromagnetic, vertical spinal electronic device
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds)
Depositing User: Dr Alexander Valavanis
Date Deposited: 15 Feb 2008 16:20
Last Modified: 27 Oct 2016 03:20
Published Version: http://dx.doi.org/10.1109/TMAG.2005.854797
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/TMAG.2005.854797

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