Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces

Valavanis, A., Ikonic, Z. and Kelsall, R.W. (2008) Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces. Physical Review B, 77 (7). 075312. ISSN 1550-235x

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Abstract

Scattering rate calculations in two-dimensional Si/Si1−xGex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n-type quantum wells, but remains almost constant in (100) p-type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates and a method is presented for calculating growth process tolerances.

Item Type:	Article
Copyright, Publisher and Additional Information:	© 2008 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy.
Academic Units:	The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User:	Dr Alexander Valavanis
Date Deposited:	15 Feb 2008 16:18
Last Modified:	08 Feb 2013 17:05
Published Version:	http://dx.doi.org/10.1103/PhysRevB.77.075312
Status:	Published
Publisher:	The American Physical Society
Refereed:	Yes
Identification Number:	10.1103/PhysRevB.77.075312
URI:	http://eprints.whiterose.ac.uk/id/eprint/3631

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