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Electron transport in n-doped Si/SiGe quantum cascade structures

Lazic, I., Ikonic, Z., Milanovic, V., Kelsall, R.W., Indjin, D. and Harrison, P. (2007) Electron transport in n-doped Si/SiGe quantum cascade structures. Journal of Applied Physics, 101. 093703. ISSN 1089-7550

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Abstract

An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is then described via scattering between quantized states, using a rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbor periods. Acoustic phonon, optical phonon, alloy disorder, and interface roughness scattering are taken into account. The calculated current/voltage dependence and gain profiles are presented for two simple superlattice structures. © 2007 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2007 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 26 Jun 2007
Last Modified: 08 Feb 2013 17:04
Published Version: http://dx.doi.org/10.1063/1.1516872
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.1516872
URI: http://eprints.whiterose.ac.uk/id/eprint/2532

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