Lazic, I., Ikonic, Z., Milanovic, V., Kelsall, R.W., Indjin, D. and Harrison, P. (2007) Electron transport in n-doped Si/SiGe quantum cascade structures. Journal of Applied Physics, 101. 093703. ISSN 1089-7550Full text available as:
Available under licence : See the attached licence file.
An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is then described via scattering between quantized states, using a rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbor periods. Acoustic phonon, optical phonon, alloy disorder, and interface roughness scattering are taken into account. The calculated current/voltage dependence and gain profiles are presented for two simple superlattice structures. © 2007 American Institute of Physics.
|Copyright, Publisher and Additional Information:||Copyright © 2007 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Repository Officer|
|Date Deposited:||26 Jun 2007|
|Last Modified:||06 Jun 2014 01:17|
|Publisher:||American Institute of Physics|
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