Hirohata, A., Xu, Y.B., Guertler, C.M., Bland, J.A.C. and Holmes, S.N. (2001) Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation. Physical Review B: Condensed Matter and Materials Physics, 63 (10). Art. No. 104425. ISSN 1550-235XFull text not available from this repository.
Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Ni80Fe20/GaAs(100) structures with doping density in the range 10(23) to 10(25) m(-3). At negative bias a helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The helicity-dependent photocurrent polarization decreases with increasing doping density and has the same variation with photon energy as found for the polarization of photoexcited electrons in GaAs. The results provide unambiguous evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent electron current passing from the semiconductor to the ferromagnet.
© 2001 The American Physical Society.
|Copyright, Publisher and Additional Information:||© 2001 The American Physical Society. Available from the author's web site (Associated URL field).|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Repository Officer|
|Date Deposited:||08 Jan 2007|
|Last Modified:||05 Aug 2007 18:25|
|Publisher:||American Physical Society|
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