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Magnetoresistance of a domain wall at a submicron junction

Xu, Y.B., Vaz, C.A., Hirohata, A., Leung, H.T., Yao, C.C., Bland, J.A.C., Cambril, E., Rousseaux, F. and Launois, H. (2000) Magnetoresistance of a domain wall at a submicron junction. Physical Review B: Condensed Matter and Materials Physics, 61 (22). R14901-R14904. ISSN 1550-235X

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A local magnetoresistance (MR) effect associated with the switching of a coherent spin block confined in a cross-shaped junction of mesoscopic ferromagnetic NiFe wires was probed with the voltage pads attached close (<1.5 μm) to the junction. A positive intrinsic MR effect, i.e., an increase in resistance, associated with local spin noncollinearity, or a 45° domain wall, in a 0.5 μm cross was demonstrated while the anisotropic MR and the Lorentz MR were unambiguously excluded. © 2000 The American Physical Society.

Item Type: Article
Copyright, Publisher and Additional Information: © 2000 The American Physical Society. Available from the author's web site (Associated URL field).
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://link.aps.org/abstract/PRB/v61/pR14901
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevB.61.R14901
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1886

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