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Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2

Xu, Y.B., Freedland, D.J., Tselepi, M. and Bland, J.A.C. (2000) Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2. Journal of Applied Physics, 87 (9). pp. 6110-6112. ISSN 1089-7550

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Abstract

The evolution of the uniaxial magnetic anisotropy of ultrathin epitaxial Fe films grown on InAs(100)-4×2 and GaAs(100)-4×2 has been studied in situ by means of the magneto-optical Kerr effect. In Fe/InAs(100)-4×2, the uniaxial magnetic anisotropy easy axis direction along [011] was found to be rotated 90° compared with that of Fe/GaAs(100)-4×2 along [01]. Real-time reflection high energy electron diffraction measurements of Fe/InAs(100)-4×2 show that the lattice constant of the epitaxial Fe films relaxes remarkedly faster along the [01] direction than along the [011] direction in the same thickness range where the uniaxial magnetic anisotropy occurs. These results suggest that the symmetry-breaking atomic scale structure of the reconstructed semiconductor surface gives rise to the uniaxial magnetic anisotropy in a ferromagnetic metal/semiconductor heterostructure via surface magneto-elastic interactions. © 2000 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: © 2000 American Institute of Physics. Available from the author's web site (Associated URL field).
Keywords:
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://dx.doi.org/10.1063/1.372625
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.372625
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1881

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