Xu, Y.B., Freedland, D.J., Tselepi, M. and Bland, J.A.C. (2000) Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2. Journal of Applied Physics, 87 (9). pp. 6110-6112. ISSN 1089-7550Full text not available from this repository.
The evolution of the uniaxial magnetic anisotropy of ultrathin epitaxial Fe films grown on InAs(100)-4×2 and GaAs(100)-4×2 has been studied in situ by means of the magneto-optical Kerr effect. In Fe/InAs(100)-4×2, the uniaxial magnetic anisotropy easy axis direction along  was found to be rotated 90° compared with that of Fe/GaAs(100)-4×2 along . Real-time reflection high energy electron diffraction measurements of Fe/InAs(100)-4×2 show that the lattice constant of the epitaxial Fe films relaxes remarkedly faster along the  direction than along the  direction in the same thickness range where the uniaxial magnetic anisotropy occurs. These results suggest that the symmetry-breaking atomic scale structure of the reconstructed semiconductor surface gives rise to the uniaxial magnetic anisotropy in a ferromagnetic metal/semiconductor heterostructure via surface magneto-elastic interactions. © 2000 American Institute of Physics.
|Copyright, Publisher and Additional Information:||© 2000 American Institute of Physics. Available from the author's web site (Associated URL field).|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Repository Officer|
|Date Deposited:||08 Jan 2007|
|Last Modified:||05 Aug 2007 18:25|
|Publisher:||American Institute of Physics|
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