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Single crystal Fe films grown on InAs(100) by molecular beam epitaxy

Xu, Y.B., Kernohan, E.T.M., Tselepi, M., Ercole, A., Bland, J.A.C. and Holmes, S. (1998) Single crystal Fe films grown on InAs(100) by molecular beam epitaxy. Applied Physics Letters, 73 (3). pp. 399-401. ISSN 0003-6951

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Abstract

Thin Fe films have been grown on InAs(100) by molecular beam epitaxy, and studied using in situ magneto-optical Kerr effect (MOKE), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Despite the large lattice mismatch between Fe and InAs, the growth of Fe on InAs at 175 °C was found to be epitaxial with the orientation relationship Fe(100)<001>||InAs(100)<001>, as evidenced by LEED. STM images indicate that growth proceeds via a 3D Volmer–Weber mode. The magnetic hysteresis loops measured using in situ MOKE show a distinct cubic anisotropy with the easy axis along <001>, the easy axis of bulk bcc Fe, which further confirms that well ordered single crystal Fe films have been stabilized on the InAs(100) substrate. Current–voltage measurements in the temperature range of 2.5–304 K show that Fe forms an ohmic contact on InAs. We propose that Fe/InAs is a suitable heterostructure for magnetoelectronic devices as, unlike Fe/GaAs, there is no Schottky barrier to electron transport. © 1998 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: © 1998 American Institute of Physics. Available from the author's web site (Associated URL field).
Keywords:
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 08 Jan 2007
Last Modified: 05 Aug 2007 18:25
Published Version: http://dx.doi.org/10.1063/1.121847
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.121847
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1880

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