Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

Freeland, D.J., Ritchie, D.A., Xu, Y.B. et al. (6 more authors) (1999) Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices. IEEE Transactions on Magnetics. pp. 3661-3663. ISSN 1941-0069



  • Freeland, D.J.
  • Ritchie, D.A.
  • Xu, Y.B.
  • Tselepi, M.
  • Guertler, C.M.
  • Lee, W.Y.
  • Bland, J.A.C.
  • Holmes, S.N.
  • Patel, N.K.
Copyright, Publisher and Additional Information: © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: ultrathin films interface magnetism,Fe/GaAs,Fe/InAs,magnetoelectronics
  • Published: September 1999
Institution: The University of York
Academic Units: The University of York > Electronic Engineering (York)
The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Repository Officer
Date Deposited: 18 Dec 2006
Last Modified: 07 Jan 2018 01:24
Published Version: http://dx.doi.org/10.1109/20.800623
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/20.800623
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