Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

Abstract

The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed.

Metadata

Item Type:	Article
Authors/Creators:	Freeland, D.J. Ritchie, D.A. Xu, Y.B. Tselepi, M. Guertler, C.M. Lee, W.Y. Bland, J.A.C. Holmes, S.N. Patel, N.K.
Copyright, Publisher and Additional Information:	© 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	ultrathin films interface magnetism, Fe/GaAs, Fe/InAs, magnetoelectronics
Dates:	Published: September 1999
Institution:	The University of York
Academic Units:	The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User:	Repository Officer
Date Deposited:	18 Dec 2006
Last Modified:	29 Mar 2024 00:05
Published Version:	https://doi.org/10.1109/20.800623
Status:	Published
Refereed:	Yes
Identification Number:	https://doi.org/10.1109/20.800623
Related URLs:	http://dx.doi.org/10.1109/20.800623

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Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

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