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Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

Hirohata, A., Guertler, C.R., Xu, Y.B. and Bland, J.A.C. (1999) Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation. IEEE Transactions on Magnetics. pp. 2910-2912. ISSN 1941-0069

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Abstract

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.

Item Type: Article
Copyright, Publisher and Additional Information: © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: photon excitation, polarized laser, ferromagnet/semiconductor interface, Schottky barrier
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 18 Dec 2006
Last Modified: 16 Oct 2014 23:35
Published Version: http://dx.doi.org/10.1109/20.801022
Status: Published
Refereed: Yes
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1850

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