Hirohata, A., Yao, C.C., Hasko, D.G., Lee, W.Y., Xu, Y.B. and Bland, J.A.C. (1999) Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device. IEEE TRANSACTIONS ON MAGNETICS. pp. 3616-3618. ISSN 0018-9464Full text available as:
The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.
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|Keywords:||pseudo-Hall effect, magnetoresistance, magnetisation reversal, MOKE|
|Academic Units:||The University of York > Electronics (York)|
|Depositing User:||Repository Officer|
|Date Deposited:||18 Dec 2006|
|Last Modified:||17 Oct 2013 14:39|