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Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

Hirohata, A., Yao, C.C., Hasko, D.G., Lee, W.Y., Xu, Y.B. and Bland, J.A.C. (1999) Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device. IEEE Transactions on Magnetics. pp. 3616-3618. ISSN 1941-0069

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Abstract

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

Item Type: Article
Copyright, Publisher and Additional Information: © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: pseudo-Hall effect, magnetoresistance, magnetisation reversal, MOKE
Institution: The University of York
Academic Units: The University of York > Electronics (York)
Depositing User: Repository Officer
Date Deposited: 18 Dec 2006
Last Modified: 16 Oct 2014 21:31
Published Version: http://dx.doi.org/10.1109/20.800608
Status: Published
Refereed: Yes
Related URLs:
URI: http://eprints.whiterose.ac.uk/id/eprint/1849

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