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XPS and XMCD study of Fe3O4/GaAs interface

Lu, Y X, Claydon, J S, Ahmad, E, Xu, Y B, Thompson, S M (orcid.org/0000-0002-3996-8081), Wilson, Karen and van der Laan, G (2005) XPS and XMCD study of Fe3O4/GaAs interface. IEEE Transactions on Magnetics. pp. 2808-2810. ISSN 1941-0069

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Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.

Item Type: Article
Copyright, Publisher and Additional Information: © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: half-metallic Fe3O4,post-growth oxidation,spintronics,XMCD,SPIN INJECTION,SEMICONDUCTOR,OXIDATION
Institution: The University of York
Academic Units: The University of York > Electronics (York)
The University of York > Physics (York)
Depositing User: Repository Officer
Date Deposited: 18 Dec 2006
Last Modified: 01 May 2016 04:36
Published Version: http://dx.doi.org/10.1109/TMAG.2005.854834
Status: Published
Refereed: Yes
URI: http://eprints.whiterose.ac.uk/id/eprint/1846

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