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Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors

Fu, L., Tan, H.H., McKerracher, I., Wong-Leung, J., Jagadish, C., Vukmirovic, N. and Harrison, P. (2006) Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors. Journal of Applied Physics, 99 (11). 114517-(8 pages). ISSN 1089-7550

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Abstract

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800 °C, in addition to the largely redshifted photoresponse peak of 7.4 µm (compared with the 6.1 µm of the as-grown QDIP), a high energy peak at 5.6 µm (220 meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy. © 2006 American Institute of Physics

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2006 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 05 Jun 2014 04:15
Published Version: http://dx.doi.org/10.1063/1.2202704
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.2202704
URI: http://eprints.whiterose.ac.uk/id/eprint/1696

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