Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors

Fu, L., Tan, H.H., McKerracher, I., Wong-Leung, J., Jagadish, C., Vukmirovic, N. and Harrison, P. (2006) Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors. Journal of Applied Physics, 99 (11). 114517-(8 pages). ISSN 1089-7550

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Authors/Creators:
  • Fu, L.
  • Tan, H.H.
  • McKerracher, I.
  • Wong-Leung, J.
  • Jagadish, C.
  • Vukmirovic, N.
  • Harrison, P.
Copyright, Publisher and Additional Information: Copyright © 2006 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 17 Sep 2016 05:22
Published Version: http://dx.doi.org/10.1063/1.2202704
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.2202704

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