Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

Jovanovic, V.D., Hofling, S., Indjin, D., Vukmirovic, N., Ikonic, Z., Harrison, P., Reithmaier, J.P. and Forchel, A. (2006) Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers. Journal of Applied Physics, 99 (10). 103106-(9 pages). ISSN 1089-7550

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Abstract

A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4–6.5)×10(11) cm(–2) have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found. © 2006 American Institute of Physics

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 2006 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Units:	The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User:	Repository Officer
Date Deposited:	02 Nov 2006
Last Modified:	08 Feb 2013 17:03
Published Version:	http://dx.doi.org/10.1063/1.2194312
Status:	Published
Publisher:	American Institute of Physics
Refereed:	Yes
Identification Number:	10.1063/1.2194312
URI:	http://eprints.whiterose.ac.uk/id/eprint/1695

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