Jovanovic, V.D., Ikonic, Z., Indjin, D., Harrison, P., Milanovic, V. and Soref, R.A. (2003) Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths. Journal of Applied Physics, 93 (6). pp. 3194-3197. ISSN 1089-7550Full text available as:
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A criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is presented. Single and double strain-balanced GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication wavelengths. The results for realizable, strain-balanced structures are presented in the form of design diagrams that give both the intersubband transition energies and the dipole matrix elements in terms of the structural parameters. The optimal parameters for structures operating at lambda ~1.3 and 1.55 µm were extracted and a basic proposal is given for a three level intersubband laser system emitting at 1.55µm and depopulating via resonant longitudinal optical(LO)phonons (h omega(LO)approximate to 90 meV). © 2003 American Institute of Physics.
|Copyright, Publisher and Additional Information:||Copyright © 2003 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Repository Officer|
|Date Deposited:||02 Nov 2006|
|Last Modified:||08 Feb 2013 17:03|
|Publisher:||American Institute of Physics|
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