Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

Jovanovic, V.D., Ikonic, Z., Indjin, D. et al. (3 more authors) (2003) Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths. Journal of Applied Physics, 93 (6). pp. 3194-3197. ISSN 1089-7550

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Authors/Creators:
  • Jovanovic, V.D.
  • Ikonic, Z.
  • Indjin, D.
  • Harrison, P.
  • Milanovic, V.
  • Soref, R.A.
Copyright, Publisher and Additional Information: Copyright © 2003 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 25 Oct 2016 17:41
Published Version: http://dx.doi.org/10.1063/1.1556177
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.1556177

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