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Electron temperature and mechanisms of hot carrier generation in quantum cascade lasers

Harrison, P., Indjin, D. and Kelsall, R.W. (2002) Electron temperature and mechanisms of hot carrier generation in quantum cascade lasers. Journal of Applied Physics, 92 (11). pp. 6921-6923. ISSN 1089-7550

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Abstract

A technique for calculating the temperature of the nonequilibrium electron distribution functions in general quantum well intersubband devices is presented. Two recent GaAs/Ga(1–x)Al(x)As quantum cascade laser designs are considered as illustrative examples of the kinetic energy balance method. It is shown that at low current densities the electron temperature recovers the expected physical limit of the lattice temperature, and that it is also a function of current density and the quantised energy level structure of the device. The results of the calculations show that the electron temperature T(e) can be approximated as a linear function of the lattice temperature T(l) and current density J, of the form T(e) = T(l) + a(e–l)J, where a(e–l) is a coupling constant (~6–7 K/kA cm(–2) for the devices studied here) which is fixed for a particular device. © 2002 American Institute of Physics.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2002 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 02 Nov 2006
Last Modified: 08 Feb 2013 17:03
Published Version: http://dx.doi.org/10.1063/1.1517747
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1063/1.1517747
URI: http://eprints.whiterose.ac.uk/id/eprint/1689

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