Fatah, J.M., Harrison, P., Stirner, T., Hogg, J.H.C. and Hagston, W.E. (1998) Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures. Journal of Applied Physics, 83 (8). pp. 4037-4041. ISSN 1089-7550Full text available as:
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Diffusion in group IV, III-V and II-VI semiconductors is an interesting problem not only from a fundamental physics viewpoint but also in practical terms, since it could determine the useful lifetime of a device. Any attempt to control the amount of diffusion in a semiconductor device, whether it be a quantum well structure or not, requires an accurate determination of the diffusion coefficient. The present theoretical study shows that this could be achieved via x-ray diffraction studies in quantum well structures. It is demonstrated that the rocking curves of single quantum wells are not sensitive to diffusion. However the intensity of the first order satellite, which is characteristic of superlattice rocking curves, is strongly dependent upon diffusion and it is proposed that this technique could be used to measure the diffusion coefficient D. © 1998 American Institute of Physics.
|Copyright, Publisher and Additional Information:||Copyright © 1998 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Repository Officer|
|Date Deposited:||01 Nov 2006|
|Last Modified:||08 Feb 2013 17:02|
|Publisher:||American Institute of Physics|
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